IRF250N PDF

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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO package is preferred for commercial-industrial applications where higher power levels preclude the use of TO devices. The TO is similar but superior to the earlier TO package because of its isolated mounting hole.

Avalanche Current? Repetitive Avalanche Energy? D Between lead, ——— 6mm 0. Repetitive rating; pulse width limited by max. See Fig. See Figure 12? Typical Output Characteristics Fig 2. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.

Maximum Safe Operating Area www. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Fig 12a. Maximum Avalanche Energy Vs. QG 12V. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www. Low Stray Inductance? Ground Plane? Low Leakage Inductance Current Transformer? Suite D.

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